{"title":"Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors","authors":"Y. Xuan, T. Yasuda","doi":"10.1109/IWGI.2003.159175","DOIUrl":null,"url":null,"abstract":"Hafnium silicate films were successfully prepared by VALID using TEOS as the Si source. They show well behaved C-V characteristics, and their leakage current density was analysed.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Hafnium silicate films were successfully prepared by VALID using TEOS as the Si source. They show well behaved C-V characteristics, and their leakage current density was analysed.
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