M. Das, J. Sumakeris, S. Krishnaswami, M. Paisley, A. Agarwal, A. Powell
{"title":"Latest advances in high voltage, drift free 4H-SiC p-i-n diodes","authors":"M. Das, J. Sumakeris, S. Krishnaswami, M. Paisley, A. Agarwal, A. Powell","doi":"10.1109/ISDRS.2003.1272137","DOIUrl":null,"url":null,"abstract":"The 4H-SiC PiN diode is an attractive choice as a high power rectifier. 4H-SiC material technology has advanced to allow the realization of high power PiN diodes. In order to fabricate PiN diodes, nitrogen doped epilayers were grown on conducting 4HN SiC substrates. Stacking fault affect the device performance. Blocking capability, forward and reverse characteristics are explained. Long term forward voltage stability measurements were made on these devices by applying a constant forward current density.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
The 4H-SiC PiN diode is an attractive choice as a high power rectifier. 4H-SiC material technology has advanced to allow the realization of high power PiN diodes. In order to fabricate PiN diodes, nitrogen doped epilayers were grown on conducting 4HN SiC substrates. Stacking fault affect the device performance. Blocking capability, forward and reverse characteristics are explained. Long term forward voltage stability measurements were made on these devices by applying a constant forward current density.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
