Y. Hou, B. Chen, B. Gao, Z. Lun, Z. Xin, R. Liu, L. Liu, D. Han, Y. Wang, X. Liu, J. Kang
{"title":"Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices","authors":"Y. Hou, B. Chen, B. Gao, Z. Lun, Z. Xin, R. Liu, L. Liu, D. Han, Y. Wang, X. Liu, J. Kang","doi":"10.1109/EDSSC.2013.6628050","DOIUrl":null,"url":null,"abstract":"TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by Al atoms' diffusion into HfOx film, robust self-compliance multilevel operation during set and reset process was reported. The possible mechanism was also discussed.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by Al atoms' diffusion into HfOx film, robust self-compliance multilevel operation during set and reset process was reported. The possible mechanism was also discussed.