{"title":"Improved Ruggedness of a High Current Vertical Power Dmos","authors":"M.J. Kim, Sayan Mukherjee, J. C. Young","doi":"10.1109/DRC.1991.664675","DOIUrl":null,"url":null,"abstract":"Summary form only given. An attempt was made to improve the ruggedness of a VDMOS through design and process innovation. To this end, a 10-A VDMOS with breakdown voltage in excess of 60 V was fabricated, tested, and compared with other devices. The VDMOS fabricated showed much higher power dissipation capability and superior ruggedness when compared with other devices available in the industry. Experimental data show that the high J/sub peak/ capability makes this VDMOS more reliable as a high-current power device and extends the safe operating range. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Summary form only given. An attempt was made to improve the ruggedness of a VDMOS through design and process innovation. To this end, a 10-A VDMOS with breakdown voltage in excess of 60 V was fabricated, tested, and compared with other devices. The VDMOS fabricated showed much higher power dissipation capability and superior ruggedness when compared with other devices available in the industry. Experimental data show that the high J/sub peak/ capability makes this VDMOS more reliable as a high-current power device and extends the safe operating range. >
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