{"title":"A Robust AlGaN/GaN HEMT Technology for RF Switching Applications","authors":"M. D. Hodge, R. Vetury, J. Shealy, R. Adams","doi":"10.1109/CSICS.2011.6062456","DOIUrl":null,"url":null,"abstract":"The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF switching applications.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF switching applications.
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