{"title":"Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method","authors":"X. Liu, L. Nanver","doi":"10.1109/ICMTS.2016.7476205","DOIUrl":null,"url":null,"abstract":"A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallow/ Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.","PeriodicalId":344487,"journal":{"name":"2016 International Conference on Microelectronic Test Structures (ICMTS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2016.7476205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallow/ Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.
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