Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks]

Y. Oh, Quan Le, Sang-Gug Lee, N.D.B. Yen, Ho-Yong Kang, T. Yoo
{"title":"Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks]","authors":"Y. Oh, Quan Le, Sang-Gug Lee, N.D.B. Yen, Ho-Yong Kang, T. Yoo","doi":"10.1109/ESSCIR.2004.1356673","DOIUrl":null,"url":null,"abstract":"This paper presents a burst-mode 1.25 Gb/s transmitter, suitable for use in Ethernet PON (E-PON) applications. With a burst enable signal, the transmitter proposed in this paper allows fast responses from the beginning of high-speed burst data while a conventional automatic power control circuit, based on feedback from a monitor photodiode, was used. The chip was implemented in 0.18 /spl mu/m CMOS technology and occupies an area of 0.9/spl times/0.75 mm/sup 2/ with about 260 mW power dissipation under 3.3 V supply. Measurements show a stable transmitted optical power over a wide temperature range (-40/spl deg/C to 80/spl deg/C) with above 10 dB extinction ratio.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

This paper presents a burst-mode 1.25 Gb/s transmitter, suitable for use in Ethernet PON (E-PON) applications. With a burst enable signal, the transmitter proposed in this paper allows fast responses from the beginning of high-speed burst data while a conventional automatic power control circuit, based on feedback from a monitor photodiode, was used. The chip was implemented in 0.18 /spl mu/m CMOS technology and occupies an area of 0.9/spl times/0.75 mm/sup 2/ with about 260 mW power dissipation under 3.3 V supply. Measurements show a stable transmitted optical power over a wide temperature range (-40/spl deg/C to 80/spl deg/C) with above 10 dB extinction ratio.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
1.25Gb/s以太网PON应用的突发模式发射机[无源光网络]
本文提出了一种适用于以太网PON (E-PON)应用的突发模式1.25 Gb/s发射机。采用突发使能信号,本文提出的发射机可以从高速突发数据开始快速响应,而使用基于监视器光电二极管反馈的传统自动功率控制电路。该芯片采用0.18 /spl mu/m CMOS工艺实现,占地0.9/spl倍/0.75 mm/sup 2/,在3.3 V电源下功耗约260 mW。测量结果表明,在宽温度范围内(-40/spl°C至80/spl°C),传输光功率稳定,消光比超过10 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Charge recycling sense amplifier based logic: securing low power security ICs against DPA [differential power analysis] 1.5 GHz OPAMP in 120nm digital CMOS Digital delay locked loop with open-loop digital duty cycle corrector for 1.2Gb/s/pin double data rate SDRAM A 14-V high speed driver in 5-V-only 0.35-/spl mu/m standard CMOS A low-swing single-ended L1 cache bus technique for sub-90nm technologies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1