QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers
{"title":"QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers","authors":"V. Ligatchev, T. Wong","doi":"10.1109/GROUP4.2004.1416659","DOIUrl":null,"url":null,"abstract":"Specific features of room-temperature I-V and C-V curves of Al/Si/sub 1-x/Ge/sub x//n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si/sub 1-x/Ge/sub x/ layers are studied experimentally and attributed to influence of quantum confinement effect.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Specific features of room-temperature I-V and C-V curves of Al/Si/sub 1-x/Ge/sub x//n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si/sub 1-x/Ge/sub x/ layers are studied experimentally and attributed to influence of quantum confinement effect.
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