Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

Gregory B. Tait, D. B. Ameen
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引用次数: 5

Abstract

A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.
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利用量子阱混合的势垒增强InGaAs/InAlAs光电探测器
在量子阱InGaAs/InAlAs MSM光电探测器上,在二维量子通道和三维金属触点之间加入了薄的势垒增强区。通过与量子通道横向接触,获得了量子通道内整个输运方向的一维均匀强电场。在数值载流子输运模拟中,用量子力学边界条件对该区域进行了建模。研究了这种薄边界对InGaAs/InAlAs MSM光电探测器暗电流和瞬态电流响应的影响。
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