Characteristics control of single electron transistor with floating gate by charge pump circuit

Abstract

A single electron transistor (SET) with floating gate, which has a non-volatile memory effect, is successfully integrated with MOS circuits. By applying high voltage generated by the charge pump circuit to the floating gate SET, the characteristics control of Coulomb blockade oscillation is demonstrated for the first time at room temperature. This attempt will open a new path of adding new functionality to conventional MOS circuits by integration with so-called Beyond CMOS devices.