Examination of residual stress measurement in electronic packages using phase-shifted sampling moiré method and X-ray images

M. Koganemaru, M. Uchino, A. Ikeda, T. Asano
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Abstract

This paper examines a novel approach to measure residual stresses in an electronic package. The presented method applies a phase-shifted sampling moiré method to X-ray images of the test chip (Si) in the electronic package. In this study, the test chip including an Au bump grid are made by general semiconductor processes for forming Au bumps on Si chip, and X-ray images of the test chip are taken before and after packaging (resin-molding). Then the phase difference of the sampling moiré fringe patterns before and after packaging can be obtained from the X-ray images of the test chip before and after packaging. The phase difference corresponds to the deformation of the test chip. The results of this examination indicate that the presented method is possible to be used for measuring residual stresses in electronic packages.
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用相移采样法和x射线图像检验电子封装中残余应力测量
本文研究了一种测量电子封装中残余应力的新方法。该方法采用相移采样法对电子封装中测试芯片(Si)的x射线图像进行处理。本研究采用通用半导体工艺在硅片上形成Au凸点,制作包含Au凸点网格的测试芯片,并对测试芯片封装(树脂成型)前后的x射线图像进行拍摄。然后从测试芯片封装前后的x射线图像中得到封装前后采样莫尔条纹图的相位差。相位差对应于测试芯片的变形。试验结果表明,该方法可用于测量电子封装中的残余应力。
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