{"title":"Fully differential high input power handling ultra-wideband low noise amplifier for MIMO radar application","authors":"M. Sakalas, P. Sakalas, N. Joram, F. Ellinger","doi":"10.1109/CSICS.2017.8240428","DOIUrl":null,"url":null,"abstract":"A fully differential, high input power handling, ultra-wideband, variable gain low noise amplifier MMIC for a monostatic MIMO radar was designed in a 130 nm SiGe BiCMOS Technology. The amplifier features an extensively high RF input power survivability, high power handling, ultra-wideband operation of 0.1–50 GHz and a linearly variable gain with 12 dB tuning range. The measured differential mode noise figure is below 5.5 dB within the bandwidth, whereas the 1-dB compression point is reached at −7.8 to −2.6 dBm input power levels at nominal gain operation. The maximum DC power consumption is 70 mW and the total chip area is 0.76 mm2.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240428","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A fully differential, high input power handling, ultra-wideband, variable gain low noise amplifier MMIC for a monostatic MIMO radar was designed in a 130 nm SiGe BiCMOS Technology. The amplifier features an extensively high RF input power survivability, high power handling, ultra-wideband operation of 0.1–50 GHz and a linearly variable gain with 12 dB tuning range. The measured differential mode noise figure is below 5.5 dB within the bandwidth, whereas the 1-dB compression point is reached at −7.8 to −2.6 dBm input power levels at nominal gain operation. The maximum DC power consumption is 70 mW and the total chip area is 0.76 mm2.
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