{"title":"High-performance hetero-nanocrystal memories","authors":"Bei Li, Yan Zhu, Huimei Zhou, Jianlin Liu","doi":"10.1109/ICSICT.2008.4734699","DOIUrl":null,"url":null,"abstract":"Metal-oxide-semiconductor field effect transistor (MOSFET) memories with self-aligned hetero-nanocrystals (TiSi2/Si and Ge/Si) as the floating gates were fabricated and characterized. Better performances were found in hetero-nanocrystal memory, including longer retention time, larger storage capability and improved writing efficiency.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Metal-oxide-semiconductor field effect transistor (MOSFET) memories with self-aligned hetero-nanocrystals (TiSi2/Si and Ge/Si) as the floating gates were fabricated and characterized. Better performances were found in hetero-nanocrystal memory, including longer retention time, larger storage capability and improved writing efficiency.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
