Unique Analysis Technique for 4-Terminal MOSFET Amplifiers using Floating Admittance Matrix Approach

Abstract

The paper presents an elegant technique of analyzing electronic devices (MOSFETs) and circuits. The conventional analysis method is complicated as it involves the small-signal equivalent circuit and uses KCL, KVL, Thevenin's, Norton theorems etc., as per the suitability of the circuit. The proposed technique helps in writing the floating admittance matrix (FAM) of any circuits by inspection, once the FAM of electronic devices (MOSFET/ BJT) is known. The matrix partitioning technique suites very well for an extensive network using the proposed technique. The sum property of all the elements of any row or column equal to zero assures to proceed further for analysis or re-observe the very first equation. This saves a lot of time and energy. The proposed floating admittance matrix technique does not assume any reference terminal. For this reason, it is called the floating admittance matrix approach. The FAM method presented here is so simple that anybody with little knowledge of electronics can analyze any circuit to derive all types of its transfer functions, knowing the matrix manoeuvring. The mathematical modelling using the FAM method allows the designer to adjust their design at any stage of analysis comfortably. These statements provide compelling reasons for the adoption of the proposed process and demonstrate its benefits. Many books suggest two methods of analysis of MOSFET amplifiers; one hybrid model and the other T-model. The proposed technique is unique for all types of configurations of MOSFET amplifiers.