{"title":"Ultra-Fast Etching of Photoresist by Reactive Atmospheric-Pressure Thermal Plasma Jet","authors":"Hibiki Kato, H. Hanafusa, Takuma Sato, S. Higashi","doi":"10.1109/issm55802.2022.10027028","DOIUrl":null,"url":null,"abstract":"We have developed a new plasma source, reactive atmospheric-pressure micro-thermal-plasma-jet (R-μTPJ) for ultra-fast etching of photoresist. R-μTPJ was generated by DC arc discharge of Ar and O2 with input power of 260 W. local heating and simultaneous supply of reactive oxygen species has achieved an etching rate as high as 46.3 μm/s.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/issm55802.2022.10027028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have developed a new plasma source, reactive atmospheric-pressure micro-thermal-plasma-jet (R-μTPJ) for ultra-fast etching of photoresist. R-μTPJ was generated by DC arc discharge of Ar and O2 with input power of 260 W. local heating and simultaneous supply of reactive oxygen species has achieved an etching rate as high as 46.3 μm/s.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
