T. Tanaka, M. Momodomi, Y. Iwata, Y. Tanaka, H. Oodaira, Y. Itoh, R. Shirota, K. Ohuchi, F. Masuoka
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引用次数: 14
Abstract
The authors describe a 4-Mb NAND-EEPROM with tight Vt (threshold voltage) distribution which is controlled by a novel program verify technique. A tight Vt distribution width of 0.6 V for the entire 4-Mb cell array is achieved, and read margin is improved. A unique twin p-well structure has made it possible to realize low-power 5-V-only erase/program operation easily compared with the previous design
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