{"title":"Edge-defined 90nm TFTs with adjustable V/sub T/ in a 3-D compatible process","authors":"J. Nasrullah, J. Burr, G. Leonard Tyler, Y. Nishi","doi":"10.1109/SOI.2005.1563522","DOIUrl":null,"url":null,"abstract":"This work focuses on the processing technology that achieves device V/sub T/ adjustability in second and higher layers of short-channel stacked devices. The device mobility and adjusted subthreshold behavior reported here are, however, comparable to those in other TFT work.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work focuses on the processing technology that achieves device V/sub T/ adjustability in second and higher layers of short-channel stacked devices. The device mobility and adjusted subthreshold behavior reported here are, however, comparable to those in other TFT work.
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