{"title":"Ho-Ba-Cu-O Thin Films for Superconductive Electronics","authors":"Stephen J. McCoy, E. Cho, Hao Li, S. Cybart","doi":"10.1109/ISEC46533.2019.8990916","DOIUrl":null,"url":null,"abstract":"HoBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf> (HBCO) thin films were grown by reactive sputtering on SrTiO<inf>3</inf> (STO), (LaAlO<inf>3</inf>)<inf>0.3</inf>(Sr<inf>2</inf> TaAlO<inf>6</inf>)<inf>0.7</inf> (LSAT), and NdGaO<inf>3</inf> (NGO) substrates for optimization of electrical properties for superconductive electronics. By changing deposition temperature and oxygen partial pressures we were able to obtain films with critical temperatures of 92 K and critical current density of 3 MA/cm<sup>2</sup>. HBCO Josephson junctions were fabricated using focused helium ion beam irradiation that exhibited excellent properties.","PeriodicalId":250606,"journal":{"name":"2019 IEEE International Superconductive Electronics Conference (ISEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Superconductive Electronics Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC46533.2019.8990916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
HoBa2Cu3O7-δ (HBCO) thin films were grown by reactive sputtering on SrTiO3 (STO), (LaAlO3)0.3(Sr2 TaAlO6)0.7 (LSAT), and NdGaO3 (NGO) substrates for optimization of electrical properties for superconductive electronics. By changing deposition temperature and oxygen partial pressures we were able to obtain films with critical temperatures of 92 K and critical current density of 3 MA/cm2. HBCO Josephson junctions were fabricated using focused helium ion beam irradiation that exhibited excellent properties.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
