Substrate bias effects on short channel length and narrow channel width PMOS devices at cryogenic temperatures

M. Deen, J. Wang, Z.X. Yan, Z. Zuo
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引用次数: 2

Abstract

The effects of substrate biasing on the characteristics of PMOS devices with varying channel lengths and widths were studied as a function of temperature from 300 K to 77 K. Results on the low field intrinsic mobility, the mobility surface and substrate bias degradation constants, and the effective low field mobility are discussed. The variation of the peak substrate current normalized to the drain current and of drain-induced-barrier-lowering with substrate bias for both groups of devices is also presented and discussed.<>
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低温条件下衬底偏压对短通道长度和窄通道宽度PMOS器件的影响
研究了衬底偏置对不同通道长度和宽度的PMOS器件特性的影响,以及温度从300 K到77 K的函数关系。讨论了低场固有迁移率、迁移率表面和衬底偏压降解常数以及有效低场迁移率。对于这两组器件,还给出并讨论了归一化的衬底峰值电流与漏极电流的变化以及漏极诱导的势垒降低随衬底偏置的变化。
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