L. Breuil, J. Lisoni, P. Blomme, G. Van den bosch, J. van Houdt
{"title":"Optimization of Ru Based Hybrid Floating Gate for Planar NAND Flash","authors":"L. Breuil, J. Lisoni, P. Blomme, G. Van den bosch, J. van Houdt","doi":"10.1109/IMW.2015.7150298","DOIUrl":null,"url":null,"abstract":"The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20nm node causes important loss of coupling factor. In order to recover the Programming window, we develop a Hybrid Floating Gate using Ru as high work-function metal. With a proper nitridation of the underlying Si and ALD technique, we obtain a continuous Ru layer as thin as 2nm that is thermally stable in contact with Si. Thanks to the higher work function of Ru, a programming window of more than 10V has been be achieved.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20nm node causes important loss of coupling factor. In order to recover the Programming window, we develop a Hybrid Floating Gate using Ru as high work-function metal. With a proper nitridation of the underlying Si and ALD technique, we obtain a continuous Ru layer as thin as 2nm that is thermally stable in contact with Si. Thanks to the higher work function of Ru, a programming window of more than 10V has been be achieved.
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