OMVPE of InP-based structures for photonic devices

Abstract

Summary form only given. An overview of the techniques important for organometallic vapor-phase epitaxy (OMVPE) of InP and related materials was presented. Switching schemes to obtain abrupt interfaces that avoid film decomposition and formation of the intermediate compound InAs and minimize formation of other intermediate compounds such as InAsP were considered. Atmospheric and low-pressure growth of InP compounds were contrasted for the growth of InP-based materials. Techniques that are important for optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) such as epitaxial regrowth and selective area growth were also discussed.<>