Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer ohmic contacts on Al/sub x/Ga/sub 1-x/N/GaN heterostructures

H.M. Zhou, B. Shen, D.J. Chen, N. Tang, T.S. Chen, G. Jiao, L. Ru, R. Zhang, Y. Shi, Y.D. Zheng
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Abstract

The ohmic contacts of Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer on unintentionally-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures have been investigated. The specific contact resistivities of 1.26/spl times/10/sup -6/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Ni/Au contact and 1.97 /spl times/ 10/sup -5/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Pt/Au contact were obtained. It is found that the Pt element in Ti/Al/Pt/Au multi-layer influent the diffusion of Al atom into the Au layer, which results in the higher contact resistivity of Ti/Al/Pt/Au contact than that of Ti/Al/Ni/Au one. The formation of excellent ohmic contact on the Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures is attributed to the existing of a compatible barrier between the metal electrode and the carrier channel at the Al/sub 0.22/Ga/sub 0.78/N/GaN hetero-interface. The width of the barrier depends on the annealing temperature and duration.
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Al/sub x/Ga/sub 1-x/N/GaN异质结构的Ti/Al/Ni/Au和Ti/Al/Pt/Au多层欧姆接触
研究了无意掺杂Al/sub 0.22/Ga/sub 0.78/N/GaN异质结构上Ti/Al/Ni/Au和Ti/Al/Pt/Au多层膜的欧姆接触。得到Ti/Al/Ni/Au接触的比接触电阻率为1.26/spl times/10/sup -6/ /spl Omega//spl middot/cm/sup 2/, Ti/Al/Pt/Au接触的比接触电阻率为1.97 /spl times/10/sup -5/ /spl Omega//spl middot/cm/sup 2/。发现Ti/Al/Pt/Au多层膜中的Pt元素影响了Al原子向Au层的扩散,导致Ti/Al/Pt/Au多层膜的接触电阻率高于Ti/Al/Ni/Au多层膜的接触电阻率。Al/sub 0.22/Ga/sub 0.78/N/GaN异质结构上良好的欧姆接触是由于Al/sub 0.22/Ga/sub 0.78/N/GaN异质界面上金属电极与载流子通道之间存在相容的势垒。势垒的宽度取决于退火温度和持续时间。
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