O. Flament, P. Paillet, D. Hervé, O. Musseau, J. Leray, B. Aspar
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引用次数: 1
Abstract
The pseudo-MOS transistor (/spl Psi/-MOSFET) has been proposed as a cheap and easy tool to characterize as-grown SOI wafers and to anticipate the radiation hardness performance of technologies manufactured upon these substrates. The aim of this study is to check the ability of this technique to investigate SIMOX response for doses up to 100 Mrad(SiO/sub 2/). Direct comparison with basic MOS transistors reveals the influence of the process.<>
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