Gaobo Xu, Qiuxia Xu, H. Yin, Huajie Zhou, Tao Yang, J. Niu, Lingkuan Meng, Xiaobin He, Guilei Wang, Yu Jiahan, Dahai Wang, Junfeng Li, Jiang Yan, Chao Zhao, Dapeng Chen
{"title":"High-quality HfSiON gate dielectric and its application in a gate-last NMOSFET fabrication","authors":"Gaobo Xu, Qiuxia Xu, H. Yin, Huajie Zhou, Tao Yang, J. Niu, Lingkuan Meng, Xiaobin He, Guilei Wang, Yu Jiahan, Dahai Wang, Junfeng Li, Jiang Yan, Chao Zhao, Dapeng Chen","doi":"10.1109/EDSSC.2013.6628205","DOIUrl":null,"url":null,"abstract":"HfSiON gate dielectric with equivalent oxide thickness of 10Å was prepared by reactive sputtering. It exhibits good physical and electrical characteristics, including good thermal stability up to 900°C, high dielectric constant and low gate leakage current. It was integrated with TaN metal gate in a novel gate-last process flow to fabricate NMOSFET. In the process, poly-silicon was deposited on HfSiON gate dielectric as dummy gate and replaced by TaN metal gate after source/drain formation. Because of the metal gate formation after the ion-implant doping activation at high temperature, HfSiON/TaN NMOSFET with good driving ability and excellent sub-threshold characteristics was fabricated.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
HfSiON gate dielectric with equivalent oxide thickness of 10Å was prepared by reactive sputtering. It exhibits good physical and electrical characteristics, including good thermal stability up to 900°C, high dielectric constant and low gate leakage current. It was integrated with TaN metal gate in a novel gate-last process flow to fabricate NMOSFET. In the process, poly-silicon was deposited on HfSiON gate dielectric as dummy gate and replaced by TaN metal gate after source/drain formation. Because of the metal gate formation after the ion-implant doping activation at high temperature, HfSiON/TaN NMOSFET with good driving ability and excellent sub-threshold characteristics was fabricated.