Chinmaya Mishra, U. Pfeiffer, R. Rassel, S. Reynolds
{"title":"Silicon Schottky Diode Power Converters Beyond 100 GHz","authors":"Chinmaya Mishra, U. Pfeiffer, R. Rassel, S. Reynolds","doi":"10.1109/RFIC.2007.380943","DOIUrl":null,"url":null,"abstract":"This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM's 0.13-mum SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3 dB up to 120 GHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM's 0.13-mum SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3 dB up to 120 GHz.
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