{"title":"VACNT fabrication on aluminum using “fast-heating” thermal CVD","authors":"Zhaoli Gao, M. Yuen","doi":"10.1109/EUROSIME.2013.6529955","DOIUrl":null,"url":null,"abstract":"A fast-heating scheme is utilized for long VACTN-TIM fabrication directly on metal substrate. VACNT arrays with lengths of more than 100 μm were achieved on Al thin film by a conventional thermal CVD at a low temperature of 600 °C. Our methodology allows patterned VACNT array fabrication using a standard lift-off process for various applications, such as thermal interface materials, super capacitor field emission devices and electronic interconnects.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2013.6529955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A fast-heating scheme is utilized for long VACTN-TIM fabrication directly on metal substrate. VACNT arrays with lengths of more than 100 μm were achieved on Al thin film by a conventional thermal CVD at a low temperature of 600 °C. Our methodology allows patterned VACNT array fabrication using a standard lift-off process for various applications, such as thermal interface materials, super capacitor field emission devices and electronic interconnects.
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利用“快速加热”热CVD技术在铝上制备真空真空元件
采用快速加热方案直接在金属基板上制备长VACTN-TIM。在低温600℃的条件下,采用传统的热气相沉积技术在Al薄膜上制备了长度超过100 μm的VACNT阵列。我们的方法允许使用标准的升空工艺制造图像化VACNT阵列,用于各种应用,如热界面材料,超级电容器场发射器件和电子互连。
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