Computer simulation of the growth of silicon ridges and wires

Abstract

We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.