S. Wirths, D. Stange, R. Geiger, Z. Ikonić, T. Stoica, G. Mussler, J. Hartmann, H. Sigg, D. Grutzmacher, S. Mantl, D. Buca
{"title":"Strain engineering for direct bandgap GeSn alloys","authors":"S. Wirths, D. Stange, R. Geiger, Z. Ikonić, T. Stoica, G. Mussler, J. Hartmann, H. Sigg, D. Grutzmacher, S. Mantl, D. Buca","doi":"10.1109/GROUP4.2014.6962004","DOIUrl":null,"url":null,"abstract":"The growth and characterization, including band structure and gain calculations, of strain engineered (Si)GeSn/GeSn heterostructures with large Sn content are presented and discussed in the view of the realization of a direct band gap semiconductor.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2014.6962004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The growth and characterization, including band structure and gain calculations, of strain engineered (Si)GeSn/GeSn heterostructures with large Sn content are presented and discussed in the view of the realization of a direct band gap semiconductor.
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