G. Minghui, Zhao Haijun, A. Bandyopadhyay, C. Jiang, Foo Pang Dow
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引用次数: 0
Abstract
This paper describes a low cost, CMOS foundry compatible BiCMOS process for 1.9 GHz RF applications. It keeps the simple feature of the triple-well single-poly approach while achieving much higher f/sub T/ by utilizing novel c-well profile engineering to reduce base and collector series resistance.
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