{"title":"Directional deposition of dielectric silicon oxide by plasma enhanced TEOS process","authors":"J. Hsieh, D.E. Ibbotson, J. Mucha, D. Flamm","doi":"10.1109/VMIC.1989.78002","DOIUrl":null,"url":null,"abstract":"A description is given of the deposition of dielectric silicon oxide from TEOS in helium/oxygen mixtures in a parallel-plate RF plasma reactor. Under appropriate process conditions, highly directional deposition of low-stress stoichiometric silicon oxide is achieved. The step coverage profiles and the chemical and physical properties of these SiO/sub 2/ films were studied to gain an understanding of the origin of preferentially vertical deposition. The typical deposition conditions used in this study were 1 torr total pressure, 320 degrees C substrate temperature, 1-40% TEOS, and 0-80% O/sub 2/ in low-power-density (0.1-0.4 W/cm/sup 2/) 14 MHz RF discharges. Step coverage, chemical stability and film stress were found to be most dependent on the O/sub 2/:TEOS gas flow ratio. This dependence can be explained by the various effects involved in the oxide deposition mechanism.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A description is given of the deposition of dielectric silicon oxide from TEOS in helium/oxygen mixtures in a parallel-plate RF plasma reactor. Under appropriate process conditions, highly directional deposition of low-stress stoichiometric silicon oxide is achieved. The step coverage profiles and the chemical and physical properties of these SiO/sub 2/ films were studied to gain an understanding of the origin of preferentially vertical deposition. The typical deposition conditions used in this study were 1 torr total pressure, 320 degrees C substrate temperature, 1-40% TEOS, and 0-80% O/sub 2/ in low-power-density (0.1-0.4 W/cm/sup 2/) 14 MHz RF discharges. Step coverage, chemical stability and film stress were found to be most dependent on the O/sub 2/:TEOS gas flow ratio. This dependence can be explained by the various effects involved in the oxide deposition mechanism.<>
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