S. Shinohara, T. Suzuki, K. Tanino, H. Kobayashi, Y. Hasegawa
{"title":"A novel low-profile power module aimed at high-frequency applications","authors":"S. Shinohara, T. Suzuki, K. Tanino, H. Kobayashi, Y. Hasegawa","doi":"10.1109/ISPSD.1996.509507","DOIUrl":null,"url":null,"abstract":"A new 8 mm-profile power module for high-frequency applications is described. This module exhibits low inductances of less than 4 nH for the terminals and a low thermal resistance of 0.234/spl deg/W/cm/sup 2/, providing less assembly time by using a unique double-layered and terminal-integrated AlN substrate. Paralleled MOSFETs in this module demonstrate 500 V-50 A switching at 10 MHz.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new 8 mm-profile power module for high-frequency applications is described. This module exhibits low inductances of less than 4 nH for the terminals and a low thermal resistance of 0.234/spl deg/W/cm/sup 2/, providing less assembly time by using a unique double-layered and terminal-integrated AlN substrate. Paralleled MOSFETs in this module demonstrate 500 V-50 A switching at 10 MHz.
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