{"title":"Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator","authors":"G. Du, Xiaoyan Liu, Meng Liu, Lei Sun, R. Han","doi":"10.1109/IWJT.2004.1306871","DOIUrl":null,"url":null,"abstract":"A double-gate Schottky barrier tunneling transistor (DGSBTT) structure is investigated by a 2-D full-band Monte Carlo device simulator. A Schottky barrier contact model including tunneling effect and Schottky effect has been implemented in this simulator. The result shows that DGSBTF has a big performance improvement compare to single gate SBTT, its Ion/Ioff is more than 10/sup 5/ at Vds= 1.0 V.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A double-gate Schottky barrier tunneling transistor (DGSBTT) structure is investigated by a 2-D full-band Monte Carlo device simulator. A Schottky barrier contact model including tunneling effect and Schottky effect has been implemented in this simulator. The result shows that DGSBTF has a big performance improvement compare to single gate SBTT, its Ion/Ioff is more than 10/sup 5/ at Vds= 1.0 V.
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