{"title":"Cylindrical Full Metal Capacitor Technology For High-speed Gigabit DRAMs","authors":"Drynan, Nakajima, Akimoto, Saito, Suzuki, Takaishi","doi":"10.1109/VLSIT.1997.623743","DOIUrl":null,"url":null,"abstract":"A cylindrical Full Metal Capacitor (FMC) elcctrode with integrated metal contact-holc plug is proposed in accordancc with thc trend in DRAMs towards low-tcmpcrature processcs, low-resistance conductors, and high-e capacitor dielcctiics in order to realizc high-speed gigabitclass rncmoiy for multimedia applications. Thc FMC technology comprises such features as a W contact-hole plug. a TIN etchstopper, a PVD+CVD-W cylinder body, W-CMP with a protective cylindcr plug. a 1.6nm tox,, Ta205 dielectric, and a TiN top elcctrodc. Gigabit-scalc W cylinders have yieldcd capacitances ovcr 4Off'lccll. with higher values contingent on processes and parameters. Trends in DRAM Technology Toward FMC Concept","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A cylindrical Full Metal Capacitor (FMC) elcctrode with integrated metal contact-holc plug is proposed in accordancc with thc trend in DRAMs towards low-tcmpcrature processcs, low-resistance conductors, and high-e capacitor dielcctiics in order to realizc high-speed gigabitclass rncmoiy for multimedia applications. Thc FMC technology comprises such features as a W contact-hole plug. a TIN etchstopper, a PVD+CVD-W cylinder body, W-CMP with a protective cylindcr plug. a 1.6nm tox,, Ta205 dielectric, and a TiN top elcctrodc. Gigabit-scalc W cylinders have yieldcd capacitances ovcr 4Off'lccll. with higher values contingent on processes and parameters. Trends in DRAM Technology Toward FMC Concept
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