Eliminating the galvanic effect for microdevices fabricated with PolyMUMPs®

A. Syed, Luye Mu, M. Shavezipur, P. Nieva
{"title":"Eliminating the galvanic effect for microdevices fabricated with PolyMUMPs®","authors":"A. Syed, Luye Mu, M. Shavezipur, P. Nieva","doi":"10.1109/MNRC.2008.4683412","DOIUrl":null,"url":null,"abstract":"The galvanic effect may notably damage associated micro-electro-mechanical devices fabricated with processes involving electrochemical steps. This effect is commonly observed when a significant amount of gold is used to design MEMS devices that are fabricated using PolyMUMPsreg. To study and overcome the galvanic effect on these devices, three methods are proposed: (1) connecting the device to a poly0 ring; (2) increasing the device surface area and (3) grounding the device to the substrate. The three methods are compared for their effectiveness in preventing galvanic corrosion. It is observed that although all three methods can considerably restrain the galvanic effect, grounding the device to the substrate is the best solution.","PeriodicalId":247684,"journal":{"name":"2008 1st Microsystems and Nanoelectronics Research Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 1st Microsystems and Nanoelectronics Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MNRC.2008.4683412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

The galvanic effect may notably damage associated micro-electro-mechanical devices fabricated with processes involving electrochemical steps. This effect is commonly observed when a significant amount of gold is used to design MEMS devices that are fabricated using PolyMUMPsreg. To study and overcome the galvanic effect on these devices, three methods are proposed: (1) connecting the device to a poly0 ring; (2) increasing the device surface area and (3) grounding the device to the substrate. The three methods are compared for their effectiveness in preventing galvanic corrosion. It is observed that although all three methods can considerably restrain the galvanic effect, grounding the device to the substrate is the best solution.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
消除用PolyMUMPs®制造的微器件的原电效应
电偶效应可能会明显地破坏与涉及电化学步骤的工艺制造的相关微机电装置。当使用大量的金来设计使用PolyMUMPsreg制造的MEMS器件时,通常会观察到这种效应。为了研究和克服这些器件的电偶效应,提出了三种方法:(1)将器件连接到聚零环上;(2)增加器件表面积和(3)使器件与基板接地。比较了三种方法防止电偶腐蚀的效果。可以观察到,虽然所有三种方法都可以相当程度地抑制原电效应,但将器件接地到衬底是最佳解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of parameter variations on the current-voltage behavior of AlGaAs tunnel junction models Hybrid integrated CMOS-microfluidic device for the detection and characterization of particles An improved simulation method for high-speed data transmission through electrical backplane All-digital skew-tolerant interfacing method for systems with rational frequency ratios among Multiple Clock Domains: Leveraging a priori timing information A CMOS Optical feedback control for high-speed DEP based microfluidic actuation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1