Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS

J. van Staveren, C. García Almudéver, Giordano Scappucci, M. Veldhorst, M. Babaie, E. Charbon, F. Sebastiano
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引用次数: 12

Abstract

This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS, NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate, for the first time, the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits, thus enabling the use of the proposed references in harsh environments, such as in space and quantum-computing applications.
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40纳米CMOS超宽温度范围4.2K至300K的电压参考
本文提出了一种标准40纳米CMOS中的电压参考,利用动态阈值MOS、NMOS和PMOS晶体管在弱反转中的温度依赖性,使其能够在4.2 K至300 K的超宽温度范围内工作。所提出的参考文献在单点修剪后实现了低于436 ppm/K的温度漂移,并且在低至0.99 V的电源中优于1.7% /V的电源调节。这些结果首次证明,使用低于1 v的纳米CMOS电路在超宽温度范围内产生与pvt无关的电压,从而能够在恶劣环境中使用所提出的参考,例如在空间和量子计算应用中。
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