M. Takai, S. Ichihara, S. Abo, F. Wakaya, H. Sayama, T. Eimori, Y. Inoue
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引用次数: 0
Abstract
Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (/spl Delta/E/E) of 4 x 10/sup -3/ has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 /spl times/ 10/sup 15/ ions/cm/sup 2/ before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.
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