{"title":"Transmission electron microscopy of high threshold voltage, high contact resistance, and high sheet resistance of MOS device","authors":"T. Sheng, C. Tung, J.L.F. Wang","doi":"10.1109/IPFA.1997.638356","DOIUrl":null,"url":null,"abstract":"Transmission electron microscopic examination (TEM) on VLSI process device is presented. Local step coverage and non-uniformity on silicidation has induced high sheet resistance and high contact resistance problems. Native oxide within submicron contacts also increases contact resistivity.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638356","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Transmission electron microscopic examination (TEM) on VLSI process device is presented. Local step coverage and non-uniformity on silicidation has induced high sheet resistance and high contact resistance problems. Native oxide within submicron contacts also increases contact resistivity.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
