Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations

2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT) Pub Date : 2020-10-19 DOI:10.1109/DFT50435.2020.9250843

V. Gupta, D. Pellegrini, S. Khandelwal, A. Jabir, Shahar Kvatinsky, E. Martinelli, C. Natale, M. Ottavi

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Abstract

Sensors give factual and process information about the environment or other physical phenomena. Sensing using memristors has been recently introduced for its potential for high density integration and miniaturization. Complementary Resistive Switch (CRS) based sensor provides an extremely efficient crossbar array that reduces the sneak current. The objective of this paper is to introduce and evaluate a circuit model for sensing using memristive complementary resistive switch. We introduce a reliable SPICE implementation of memristor model that captures the sensing behaviour of memristor. Our simulation results also validate the SPICE model for CRS sensing architecture, whose parameters could be easily adapted to match experimental data. The results also investigate the sensitivity and device behaviour of memristor and CRS sensor device in the presence of oxidizing and reducing gases of different concentration.

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忆阻互补电阻开关传感:建模与仿真

传感器提供有关环境或其他物理现象的事实和过程信息。由于具有高密度集成和小型化的潜力，使用忆阻器的传感最近被引入。互补电阻开关(CRS)为基础的传感器提供了一个非常有效的横条阵列，减少了潜流。本文的目的是介绍和评估一种利用忆阻互补电阻开关进行传感的电路模型。我们介绍了一个可靠的忆阻器模型的SPICE实现，它捕获了忆阻器的传感行为。仿真结果也验证了SPICE模型对CRS传感体系结构的影响，该模型的参数可以很容易地与实验数据相匹配。研究了不同浓度的氧化性和还原性气体存在时，忆阻器和CRS传感器的灵敏度和器件性能。

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2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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