S. Noda, M. Miyamoto, H. Horibe, I. Oya, M. Kuzumoto, T. Kataoka
{"title":"Development of photo-resist stripping process using ozone and water vapor","authors":"S. Noda, M. Miyamoto, H. Horibe, I. Oya, M. Kuzumoto, T. Kataoka","doi":"10.1109/ISSM.2001.962956","DOIUrl":null,"url":null,"abstract":"A resist stripping process using highly-concentrated ozone gas and water vapor has been developed This method features higher removal rate and/or an eco-friendly process, compared with conventional methods. Influences of substrate temperature, water vapor concentration, anti residence time, on the removal rate have been experimentally investigated in detail. An FT-IR spectroscope was used to analyze the substrate before/after the treatment in order to clarify the mechanism of the resist stripping by ozone and water vapor It is shown that water plays an important role in the resist decomposition. Main factor of higher removal rate over 1 /spl mu/m/min in this method is also discussed.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A resist stripping process using highly-concentrated ozone gas and water vapor has been developed This method features higher removal rate and/or an eco-friendly process, compared with conventional methods. Influences of substrate temperature, water vapor concentration, anti residence time, on the removal rate have been experimentally investigated in detail. An FT-IR spectroscope was used to analyze the substrate before/after the treatment in order to clarify the mechanism of the resist stripping by ozone and water vapor It is shown that water plays an important role in the resist decomposition. Main factor of higher removal rate over 1 /spl mu/m/min in this method is also discussed.
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