Ultra-Compact Monolithic Integration of Polarization Diversity Waveguide/Photodiodes

R. J. Den, E. Pennings, R. Hawkins, C. Caneau
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引用次数: 4

Abstract

Summary form only given. A description is given of a device which consists of an input rib waveguide, a vertically defined coupler, a vertically coupled mesa p-i-n photodiode (PD), a second coupler, and a second PD, all serially connected. A gold cover on the first coupler ensures that only TE-polarized light is coupled into the first PD; the second coupler/PD pair collects the remaining TM light. Component lengths are 79 and 54 mu m for couplers and 21 and 31 mu m for PDs, for approximately 200- mu m total detector length. The device consists of p-InGaAsP/i-InGaAs/n-InGaAsP PD layers above semi-insulating coupler layers (two GaAsP:Fe guides, InP:Fe cladding). The vertically integrated coupler/detectors are more than an order of magnitude smaller than conventional couplers, and of comparable size to electronic components (e.g. FET gate widths). >
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偏振分集波导/光电二极管的超紧凑单片集成
只提供摘要形式。描述了一种由输入肋波导、垂直定义耦合器、垂直耦合台面p-i-n光电二极管(PD)、第二耦合器和第二PD组成的器件,所有器件均串行连接。第一耦合器上的金盖确保只有te偏振光耦合到第一PD;第二耦合器/PD对收集剩余的TM光。耦合器的元件长度为79 μ m和54 μ m, pd的元件长度为21 μ m和31 μ m,检测器总长度约为200 μ m。该器件由半绝缘耦合器层(两个GaAsP:Fe波导,InP:Fe包层)之上的p-InGaAsP/i-InGaAs/n-InGaAsP PD层组成。垂直集成的耦合器/检测器比传统的耦合器小一个数量级以上,并且与电子元件的尺寸相当(例如FET栅极宽度)。>
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