M. Scholl, R. Wunderlich, S. Heinen, Tobias Saalfeld, Christoph Beyerstedt, Fabian Speicher, Jonas Meier, Michael Hanhart, Leo Rolff, V. Bonehi, M. Schrey
{"title":"A 32 MHz Crystal Oscillator with Fast Start-Up Using Dithered Injection and Negative Resistance Boost","authors":"M. Scholl, R. Wunderlich, S. Heinen, Tobias Saalfeld, Christoph Beyerstedt, Fabian Speicher, Jonas Meier, Michael Hanhart, Leo Rolff, V. Bonehi, M. Schrey","doi":"10.1109/ESSCIRC.2019.8902894","DOIUrl":null,"url":null,"abstract":"This work presents a fast start-up 32 MHz crystal oscillator for low power wireless transceivers. A highly efficient start-up technique combining dithered frequency injection and a negative resistance boost is proposed to reduce start-up time while maintaining low start-up energy. In measurements the proposed technique achieves a start-up time of 32.7 μs with 31.7 nJ startup energy enabling low power consumption in latency-driven applications. In steady state operation the oscillator has a power consumption of 181.6 μW. The circuit area of the proposed crystal oscillator is 0.058 mm2 in a 130 nm RF CMOS technology.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This work presents a fast start-up 32 MHz crystal oscillator for low power wireless transceivers. A highly efficient start-up technique combining dithered frequency injection and a negative resistance boost is proposed to reduce start-up time while maintaining low start-up energy. In measurements the proposed technique achieves a start-up time of 32.7 μs with 31.7 nJ startup energy enabling low power consumption in latency-driven applications. In steady state operation the oscillator has a power consumption of 181.6 μW. The circuit area of the proposed crystal oscillator is 0.058 mm2 in a 130 nm RF CMOS technology.