Laser Direct Structuring of Semiconductor Liquid Encapsulants for Active Mold Packaging

Chunlin He, Ruud DeWit, Jay Chao, Tim Champagne, R. Guino, T. Winster, R. Trichur, Mario Saliba, F. Song, F. Roick, Simon Heitmann, Bernd Roesener, Johan Stelling
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Abstract

New technology trends in smart electronics are driving advanced semiconductor packaging innovations. Mobile RF and automotive IC designs, as examples, continue to evolve towards architectures requiring greater functionality, better shielding at higher frequencies, miniaturization, higher robustness/ ruggedness, and with lower power consumption. In turn, the architecture enhancements put new demands on semiconductor encapsulant material development and criteria. To meet these challenges, new types of SVHC-free, low warpage, liquid compression molding (LCM) encapsulants were developed with Cu Plating capability by laser direct structuring (LDS). Electroless Cu plating of 25/25 μm L/S lasered tracks and lasered through mold vias (TMVs) down to 50 μm have already been demonstrated during 2021.This presentation will cover further material development on a new LDS encapsulant applied via stencil printing aiming for <50 μm thin dielectric layers with 15/15 μm L/S Cu tracks and <50 μm Cu plated TMVs/ blind vias. These metrics provide opportunity for more functionality with even smaller package footprints vs todays' granular and transfer molding encapsulation methods. Moreover, this liquid LDS technology can improve final device building efficiency by introducing only three backend approved processing steps (encapsulation, lasering and plating) versus a typical less efficient mask and lithography based semi-additive process. In contrast to subtractive and semi-additive technologies, LDS is a truly additive, highly selective, and direct technology which provides additional metal planes directly on the encapsulant. And supporting a more sustainable and natural resources saving backend manufacturing of semiconductor packages.
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主动模封装用半导体液体封装剂的激光直接结构研究
智能电子的新技术趋势正在推动先进的半导体封装创新。例如,移动射频和汽车IC设计继续向需要更大功能、更高频率下更好屏蔽、小型化、更高稳健性/坚固性和更低功耗的架构发展。反过来,架构的增强对半导体封装材料的开发和标准提出了新的要求。为了应对这些挑战,采用激光直接结构(LDS)技术开发了具有镀铜能力的新型无svhc、低翘曲、液体压缩成型(LCM)密封剂。化学镀铜25/25 μm L/S激光轨迹和激光通过模具孔(tmv)低至50 μm已经在2021年进行了演示。本次演讲将介绍通过模板打印应用的新型LDS封装剂的进一步材料开发,旨在实现<50 μm薄介质层,15/15 μm L/S Cu磁道和<50 μm Cu镀tmv /盲孔。与目前的颗粒封装和传递成型封装方法相比,这些指标为更小的封装面积提供了更多功能的机会。此外,这种液态LDS技术可以通过只引入三个后端批准的加工步骤(封装、激光和电镀)来提高最终器件的制造效率,而不是采用典型的效率较低的掩模和光刻半增材工艺。与减法和半增材技术相比,LDS是一种真正的增材、高选择性和直接的技术,可直接在封装剂上提供额外的金属平面。并支持更可持续和节约自然资源的半导体封装后端制造。
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