Y. Hasegawa, Y. Ogata, I. Nagasako, K. Inosako, N. Iwata, M. Kanamori, T. Itoh
{"title":"3.4 V operation power amplifier multi-chip IC's for digital cellular phone","authors":"Y. Hasegawa, Y. Ogata, I. Nagasako, K. Inosako, N. Iwata, M. Kanamori, T. Itoh","doi":"10.1109/GAAS.1995.528962","DOIUrl":null,"url":null,"abstract":"GaAs power multi-chip IC's (MCIC's) operating at 3.4 V for digital cellular phone have been successfully developed, employing a double-doped heterojunction FET (HJFET). The MCIC's can deliver an output power over 31.2 dBm with a power added efficiency of 45% in the frequency range from 940 to 956 MHz, and from 1429 to 1453 MHz, respectively. The MCIC's have low distortion characteristics, and the adjacent channel interference level of the /spl pi//4-shift QPSK modulation is -50 dBc at the 150 kHz apart from the center frequency. The package size is having a total volume of only 0.4 cc, half of 14.2/spl times/11.2/spl times/2.4 mm that for conventional power amplifier MCIC's. The MCIC's will contribute to realization of compact cellular phones.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
GaAs power multi-chip IC's (MCIC's) operating at 3.4 V for digital cellular phone have been successfully developed, employing a double-doped heterojunction FET (HJFET). The MCIC's can deliver an output power over 31.2 dBm with a power added efficiency of 45% in the frequency range from 940 to 956 MHz, and from 1429 to 1453 MHz, respectively. The MCIC's have low distortion characteristics, and the adjacent channel interference level of the /spl pi//4-shift QPSK modulation is -50 dBc at the 150 kHz apart from the center frequency. The package size is having a total volume of only 0.4 cc, half of 14.2/spl times/11.2/spl times/2.4 mm that for conventional power amplifier MCIC's. The MCIC's will contribute to realization of compact cellular phones.
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