A Highly Reliable 0.35/spl mu/m Field-shield Body-tied SOI Gate Array For Substrate-bias-effect Free Operation

Maeda, Yamaguchi, Kim, Iwamatsu, Ipposhi, Miyamoto, Hirano, Ueda, Nii, Mashiko, Maegawa, Inoue, Nishimura
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引用次数: 4

Abstract

A Highly Reliable 0.35pm Field-Shield Body-Tied SO1 Gate Array for Substrate-Bias-Effect Free Operation S. Maeda, Y. Yamaguchi, I.-J. Kim, 7: Iwamatsu, 7: Ipposhi, S. Miyamoto, Y. Hirano, K.Ueda*, K. Nii*, K. Mashiko*, S . Maegawa, Y. Inoue andT Nishimura ULSI Laboratory and *System LSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, JAPAN, TEL:+81-727-84-7324, FAX:+81-727-80-2693
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用于无衬底偏置效应工作的高可靠0.35/spl mu/m场屏蔽体系SOI门阵列
张建军,张建军,张建军,等。一种高可靠性的0.35pm场屏蔽体系SO1栅极阵列,用于无衬底偏置效应。Kim, 7: iposhi, S. Miyamoto, Y. Hirano, K. ueda *, K. Nii*, K. Mashiko*, S。Maegawa, Y. Inoue和t Nishimura ULSI实验室和*系统LSI实验室,三菱电机公司,4-1 Mizuhara,伊丹,兵库县664,日本,电话:+81-727-84-7324,传真:+81-727-80-2693
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