S. Ohmi, I. Ueda, Y. Kobayashi, K. Tsutsui, H. Iwai
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引用次数: 0
Abstract
In this paper, Lu/sub 2/O/sub 3//La/sub 2/O/sub 3/ stacked layer structures of rare earth oxides were investigated. The La/sub 2/O/sub 3/ layer would be expected to form a uniform silicate layer with relatively high dielectric constant compared to SiO/sub 2/ after the annealing process so that the leakage current characteristics would be improved for the stacked layer structures compared to those of the single Lu/sub 2/O/sub 3/ layer.
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