T. Yamamoto, E. Mitani, K. Inoue, M. Nishi, S. Sano
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引用次数: 17
Abstract
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technology is extension of well-established Eudyna commercial L-/S-band AlGaN/GaN HEMT technology. The device shows output power of over 60W and a high linear gain of 9.6dB in wide frequency range of 9.5-10.5GHz, operating at 40 V drain bias voltage with the pulsed conditions at a duty of 10% with a pulse width of 100 musec. The results show the developed 60W AlGaN/GaN HEMT has high power capability covering practical frequency range for X-band high power applications with proven device technology.
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