{"title":"Self-consistent quasi-static C-V characteristics of In1−xGaxSb XOI FET","authors":"Md Nur Kutubul Alam, M. Islam, Md.R. Islam","doi":"10.1109/EDSSC.2013.6628047","DOIUrl":null,"url":null,"abstract":"In1-xGaxSb XOI nFET is proposed and its capacitance-voltage (CV) characteristics are investigated. One dimensional coupled Schrödinger-Poisson equation is solved to calculate charge and hence to the capacitance. Well known SILVACO's ATLAS device simulation package is used to carry out the simulation. It is found that the CV characteristic as well as the threshold voltage of the proposed device depend on different process parameters like doping concentration, channel composition, channel thickness, gate oxide and oxide thickness, and operating temperature. Doping dependent threshold voltage shift is related with maximum allowable doping level, and which is also important for understanding enhancement mode operation.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In1-xGaxSb XOI nFET is proposed and its capacitance-voltage (CV) characteristics are investigated. One dimensional coupled Schrödinger-Poisson equation is solved to calculate charge and hence to the capacitance. Well known SILVACO's ATLAS device simulation package is used to carry out the simulation. It is found that the CV characteristic as well as the threshold voltage of the proposed device depend on different process parameters like doping concentration, channel composition, channel thickness, gate oxide and oxide thickness, and operating temperature. Doping dependent threshold voltage shift is related with maximum allowable doping level, and which is also important for understanding enhancement mode operation.
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