Silicon on diamond heat sinks by bonding and etch back

A. Soderbarg, B. Edholm, J. Olsson, S. Tiensuu, E. Johansson
{"title":"Silicon on diamond heat sinks by bonding and etch back","authors":"A. Soderbarg, B. Edholm, J. Olsson, S. Tiensuu, E. Johansson","doi":"10.1109/SOI.1993.344593","DOIUrl":null,"url":null,"abstract":"In this abstract a concept is presented aimed to increase the heat distribution and to reduce the thermal resistance in SOI-devices. This is realized using a combination of fusion bonding and thinning against stopping layers with deposition of poly-crystalline diamond as the buried isolator. Thus, by replacing oxide with diamond, a Silicon-on-Diamond (SOD) structure is formed.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344593","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In this abstract a concept is presented aimed to increase the heat distribution and to reduce the thermal resistance in SOI-devices. This is realized using a combination of fusion bonding and thinning against stopping layers with deposition of poly-crystalline diamond as the buried isolator. Thus, by replacing oxide with diamond, a Silicon-on-Diamond (SOD) structure is formed.<>
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金刚石上的硅通过粘接和蚀刻来散热
在这个抽象的概念,提出了旨在增加热量分布和减少热阻在soi器件。这是通过融合键合和减薄阻止层的组合实现的,并沉积多晶金刚石作为埋藏隔离器。因此,通过用金刚石取代氧化物,形成了金刚石上硅(SOD)结构
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