{"title":"A novel analytical physical model for thin film SOI RESURF structure based on 2-D Poisson equation","authors":"Wenhong Li, Jinsheng Luo","doi":"10.1109/ICSICT.1998.786077","DOIUrl":null,"url":null,"abstract":"In this paper, a novel analytical physical model for a thin film SOI RESURF structure is developed, based on the 2D Poisson equation, and the influence of the field SiO/sub 2/ interface charge is considered. The thin film SOI RESURF structure is analyzed using this novel model. There are two electric field peak values at the interfaces of the p/sup +/n and n/sup +/n junctions. The potential distribution is similar to a step between the p/sup +/n and n/sup +/n junctions. The field SiO/sub 2/ interface charge makes the electric field increase at the interface of the p/sup +/n junction, and reduces the electric field at the interface of the n/sup +/n junction. The analytical results agree with the simulations of MEDICI.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.786077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a novel analytical physical model for a thin film SOI RESURF structure is developed, based on the 2D Poisson equation, and the influence of the field SiO/sub 2/ interface charge is considered. The thin film SOI RESURF structure is analyzed using this novel model. There are two electric field peak values at the interfaces of the p/sup +/n and n/sup +/n junctions. The potential distribution is similar to a step between the p/sup +/n and n/sup +/n junctions. The field SiO/sub 2/ interface charge makes the electric field increase at the interface of the p/sup +/n junction, and reduces the electric field at the interface of the n/sup +/n junction. The analytical results agree with the simulations of MEDICI.
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