A novel design for a MMIC 180 degree phase shifter

M. Goldfarb
{"title":"A novel design for a MMIC 180 degree phase shifter","authors":"M. Goldfarb","doi":"10.1109/MCS.1992.186020","DOIUrl":null,"url":null,"abstract":"A novel circuit topology is discussed for the design a 180 degrees phase shifter. The approach exploited the dual nature of the tee and pi configurations of the lowpass and highpass filter topologies. The resulting configuration required fewer elements than conventional switched filter approaches and did not require complementary control voltages. It has been realized by using MESFETs. When the switching elements are in the low-impedance state, the circuit becomes a highpass pi network. In the high-impedance state, the network forms a lowpass tee network. This topology requires only a single control signal halving the complexity of the switch driver. Additionally, the number of phase shifting components is reduced to only two inductors and two capacitors.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A novel circuit topology is discussed for the design a 180 degrees phase shifter. The approach exploited the dual nature of the tee and pi configurations of the lowpass and highpass filter topologies. The resulting configuration required fewer elements than conventional switched filter approaches and did not require complementary control voltages. It has been realized by using MESFETs. When the switching elements are in the low-impedance state, the circuit becomes a highpass pi network. In the high-impedance state, the network forms a lowpass tee network. This topology requires only a single control signal halving the complexity of the switch driver. Additionally, the number of phase shifting components is reduced to only two inductors and two capacitors.<>
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种新颖的MMIC 180度移相器设计
讨论了一种用于180度移相器设计的新颖电路拓扑结构。该方法利用了低通和高通滤波器拓扑的tee和pi配置的双重性质。由此产生的配置比传统的开关滤波器方法需要更少的元件,并且不需要补充控制电压。这是用mesfet实现的。当开关元件处于低阻抗状态时,电路成为一个高通pi网络。在高阻抗状态下,网络形成低通三通网络。这种拓扑结构只需要一个控制信号,将开关驱动器的复杂性减半。此外,相移元件的数量减少到只有两个电感器和两个电容器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
12 W monolithic X-band HBT power amplifier Broad-band electromagnetic radiation damage in GaAs MESFETs Extremely low power transmitter/receiver GaAs MMIC circuits at L band Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions A GaAs IC broadband variable ring oscillator and arbitrary integer divider
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1